polewgz.blogg.se - Download 2n2222 transistor for free

* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

(T amb = 25 ☌ unless otherwise specified) SymbolĬolllector-base Breakdown Voltage (I E = 0)Ĭollector-emitter Breakdown Voltage (IB = 0)Įmittter-base Breakdown Voltage (I C = 0) They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages.ĢN2218/2N2219 approved to CECC 50002-100, 2N2221/2N2222 approved to CECC 50002-101 available on request. If some data source only has data for the active region, this is probably good enough.The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. In other words, all of the non-linearities are important, and the behaviour in regions outside of as well as including the active region are also important. I am interested in writing some simulations involving BJTs which requires more information than can be obtained from the typical transistor equations. Some might become dependent on each other if a complete circuit is drawn including an impedance on the base and collector (or emitter) nodes.Īre there any example devices which have (presumably large) tables of data available for download for measurements of these parameters?

I don't know if these are all independent - I believe they all are.

Transistor temperature, which other variables such as the Collector-Emitter current, might have a second order effect from.

Transistor HFE (beta) which is a function of temperature.

To explain further, for a simple BJT circuit we have the following variables. Is there anywhere I can download some current-voltage data for a bipolar junction transistor? (It doesn't matter that much which one.)